main| new issue| archive| editorial board| for the authors| publishing house|
Πσρρκθι
Main page
New issue
Archive of articles
Editorial board
For the authors
Publishing house

 

 


ABSTRACTS OF ARTICLES OF THE JOURNAL "INFORMATION TECHNOLOGIES".
No. 2. Vol. 31. 2025

DOI: 10.17587/it.31.65-71

K. D. Lyubavin, Lead Engineer, Department of Logical Design,
Kraftway Corporation PLC JSC, Moscow, 129626, Russian Federation,
D. V. Telpukhov, Dr. Sc., Deputy Director General for Science, AlphaCHIP LLC, Zelenograd, Moscow, 124498, Russian Federation

A Method for Implementing Address Translation Unit for Use in Solid-State Drive Controllers

The paper proposes a method for implementing the translation of logical addresses of host requests of stored data into physical addresses of data located in an array of non-volatile NAND Flash memory. The main limitations of working with NAND Flash memory are described, and a set of mechanisms for solving the problem of address translation is proposed. Additionally, optimization methods of the translation table cells are described to achieve high optimization of interaction with the memory buffer allocated for storing the address translation table. The proposed methods and the described features can be used in the development of address translation units of modern high-performance solid-state drive (SSD) controllers with high logical capacity.
Keywords: solid state drives, SSD, flash translation layer, FTL, garbage collector, NVMe, system on a chip

P. 65-71

References

  1. Yoon CW. The Fundamentals of NAND Flash Memory: Technology for tomorrow's fourth industrial revolution, IEEE Solid-State Circuits Magazine, 2022, vol. 14, pp. 56—65, doi: 10.1109/mssc.2022.3166466.
  2. Kim S. S., Yong S. K., Kim W., Kang S., Park H. W., Yoon K. J., Sheen D. S., Lee S., Hwang C. S. Review of Semiconductor Flash Memory Devices for Material and Process Issues, Adv Mater., 2023, Oct., vol. 35, no. 43, pp. e2200659, doi: 10.1002/adma.202200659, Epub 2022 May 22, PMID: 35305277.
  3. Sheng J., Xu P., Qiu M., Luo Y., Ding L., Yao Z., He B., Goi S., Ma W. Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects, AIP Advances, 2023, vol. 13, pp. 045203, doi: 10.1063/5.0139928.
  4. Solovyev R. A., Stempkovsky A. L., Telpukhov D. V. Study of Fault Tolerance Methods for Hardware Implementations of Convolutional Neural Networks, Opt. Mem. Neural Networks, 2019, vol. 28, pp. 82—88, available at: https://doi.org/10.3103/S1060992X19020103
  5. Gavrilov S. V., Gurov S. I., Zhukova T. D. et al. Methods to Increase Fault Tolerance of Combinational Integrated Microcircuits by Redundancy Coding, Comput Math Model., 2017, vol. 28, pp. 400—406, available at: https://doi.org/10.1007/s10598-017-9372-3.
  6. Sheng J., Qiu M., Xu P., Ding L., Luo Y., Yao Z., Zhang F., Gou S., Wang Z., Xue Y. Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation, AIP Advances, 2024, vol. 14, doi: 10.1063/5.0188085.
  7. Novotny R., Kadlec J., Kuchta R. NAND Flash Memory Organization and Operations, Journal of Information Technology & Software Engineering, 2015, vol. 5, iss. 1, pp. 8, doi: 10.4172/2165­7866.1000139.
  8. Open NAND Flash Interface Specification, Revision 5.1. Intel Corporation, Micron Technology, Inc., Phison Electronics Corp., Western Digital Corporation, SK Hynix, Inc., Sony Corporation, 2022, 398 p.
  9. Liubavin K. Features of the development of a high-performance commands processing subsystem of modern solid-state drive controllers, Proceedings of Microelectronics 2023, Collection of abstracts, Sirius Science and Art Park, October 9—14, 2023, pp. 74—76 (In Russian).
  10. Liubavin K. Development of a high-performance NAND memory controller with a programmable ONFI/Toggle interface command system, Proceedings of Microelectronics 2023, Collection of abstracts, Sirius Science and Art Park, October 9—14, 2023, pp. 77—79 (in Russian).
  11. Lyubavin K., Telpukhov D. Methods for Constructing High-Performance Interconnects in System-on-Chip Designs, Informazionnye Tehnologii, 2024, vol. 25, no. 8, pp. 433—439 (in Russian), doi: 10.17587/it.30.433-439.
  12. McEwan A. A. Pre-Emptive Garbage Collection for SSD RAID / A. A. McEwan, M. Z. Komsul, 2016 Euromicro Conference on Digital System Design (DSD), Limassol, Cyprus, 2016, pp. 356—363, doi: 10.1109/DSD.2016.96.

To the contents