Annotation of the articleInfluence of a thin film of aluminum 0,3 microns thick on dynamic characteristics of the MEMS device with two rotary degrees of freedom was studied. Natural frequencies and Q-factor of mechanical oscillatory system of the device were defined. It was found the Q-factor strongly depends on die attachment method. It was shown that Q-factor device with metallization could gain 15000-20000. This value is sufficient for applications and facilitate device fabrication.
Keywords: the MEMS device, metallization, quality factor, loss of energy of the micromechanical device